发明名称 |
High-density plasma, organic anti-reflective coating etch system compatible with sensitive photoresist materials |
摘要 |
By providing a photoresist material with a protective polymer layer during the etching of an organic anti-reflective coating, undue damage to the photoresist material can be avoided during opening of the anti-reflective coating without the need for an oxidant. The preferred polymer chemistry system for producing such a result includes a fluorohydrocarbon-containing polymer mixture with a strong source of CF3, preferably C2F6. The etchant also includes a source of hydrogen selected from CH3F, C2HF5, or CH2F2, and a diluent selected from Ar, He or N2.
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申请公布号 |
US6228279(B1) |
申请公布日期 |
2001.05.08 |
申请号 |
US19980156065 |
申请日期 |
1998.09.17 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ARMACOST MICHAEL;HOH PETER;WISE RICHARD S.;YAN WENDY |
分类号 |
H01L21/311;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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