摘要 |
<p>Semiconducting layer is formed into a base plate by spraying on at 600-650 degrees C esp. a SnCl4 soln. applying an insulating SiO2 layer and finally spraying esp. a SnCl4 soln. contg. a heavy metal in e.g. Au, Cu, Zn, Ni to form the gas sensitive layer pref 10-4 mm thick. Electrodes can be soldered on the element incorporated into a Wheatstone bridge circuit.</p> |