BURIED CONTACT STRUCTURE OF SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A buried contact structure of a semiconductor device is provided to prevent a storage node electrode from being abnormally etched in an inlet of an uppermost portion of a buried contact hole even when misalignment regarding the buried contact hole occurs in a photolithography process for patterning the storage node electrode, by making the inlet of the uppermost portion of the buried contact hole have a vertical profile. CONSTITUTION: A semiconductor device is formed on a semiconductor substrate(100). The first interlayer dielectric(130) is formed on the semiconductor substrate. The first interconnection penetrates the first interlayer dielectric to be connected to the semiconductor device. The second interlayer dielectric(150) is formed on the first interconnection and the first interlayer dielectric. An etching stop layer(160) is formed on the second interlayer dielectric. A buried contact hole(190) penetrates the etching stop layer and the second interlayer dielectric to expose the semiconductor device. An insulating layer spacers(192) are formed on inner sidewalls of the buried contact hole. The second interconnection is formed on the buried contact hole and the etching stop layer, connected to the semiconductor device through the buried contact hole. An inlet of an uppermost portion of the buried contact hole has a vertical profile to guarantee sufficient misalignment margin between the buried contact hole and the second interconnection.