发明名称 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
摘要 PURPOSE: A method for fabricating a semiconductor device is provided to minimizes the size of a memory chip and reduce the contact number per bit line to decrease the generation of poor memory chips caused by poor contacts. CONSTITUTION: Memory cell arrays having bit line pairs are arranged at left and right sides of sense amplifiers(10,20) to share the sense amplifier. Equalizers(50,80) and transfer units(40,70) are located between the sense amplifiers and memory cell array, and input/output selectors(31,32) are placed between the transfer units and sense amplifiers. An N+ active region(100) that shares the sources of transistors of the transfer units and the drains of transistors of the input/output selectors is electrically connected to the bit lines through a single contact.
申请公布号 KR20010036375(A) 申请公布日期 2001.05.07
申请号 KR19990043366 申请日期 1999.10.08
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO, YEONG OK;JU, JAE HUN;KANG, SANG SEOK
分类号 H01L27/108;G11C11/4096;H01L21/8242;(IPC1-7):G11C11/407 主分类号 H01L27/108
代理机构 代理人
主权项
地址