| 摘要 |
PURPOSE: A vacuum system of an ion injection device is provided to prevent the pollution of a wafer by controlling a pressure difference according to an opening process of a valve in a load-lock chamber. CONSTITUTION: A vacuum system of an ion injection device comprises an ion source chamber(10), an ion beam line chamber(20), an end station(30), a load-lock chamber(40) connected with the end station(30), a vacuum pump(60) connected with load-lock chamber(40) through a vacuum line(50), and a roughing valve(V1,V2) installed at the vacuum pump(60). A pressure variation prevention valve(V11,V12) is installed between the load-lock chamber(40) and the roughing valve(V1,V2) in order to prevent a sudden change of a pressure between the load-lock chamber(40) and the vacuum line(50).
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