METHOD FOR FORMING METAL FILM OF SEMICONDUCTOR DEVICE USING INSULATING FILM HAVING LOW DIELECTRIC CONSTANT AS INTERLAYER DIELECTRIC LAYER

摘要

PURPOSE: A method for forming a metal film of a semiconductor device is provided to prevent cross talk when a signal is transferred among electrically isolated metal lines by forming a low dielectric insulation layer. CONSTITUTION: A first metal pattern(42) and a first insulation layer(44) are sequentially formed on a substrate(40). A second insulation layer(46) having a low dielectric constant is formed. Ultraviolet ray is irradiated on the entire surface of the resultant structure. A via hole(52) is formed by patterning the resultant structure to expose the first metal pattern(42). A second metal pattern(56) is formed to be connect to the first metal pattern(42) through the via hole(52). The second insulation layer(46) is able to be formed by using SiOC layer. The ultraviolet ray make the layer(46) strong about oxygen plasma.