| 摘要 |
PROBLEM TO BE SOLVED: To provide a liquid phase epitaxial growth device which can prevent the leakage of a melted liquid from a growth chamber and also increase the number of treated semiconductor substrates per batch to enhance production efficiency. SOLUTION: An approximately cylindrical growth chamber assembly 2 for receiving semiconductor substrates 30 in a state standing in the perpendicular direction is disposed below an upper member 6 having melted liquid reservoirs 8, 8' and 8" formed therein in the uniformly heated region of an oven. A movement control means 40 for inhibiting the movement of the growth chamber assembly 2 in the axial direction is disposed. An approximately cylindrical inner member 10 is slidably fit onto the outer periphery of the growth chamber assembly 2, and the first penetrated hole 12 is formed in the inner member 10. The first penetrated hole 12 communicates with the melted liquid-charging port 21 of the growth chamber assembly 2, when the inner member 10 is moved to the first position in the axial direction.
|
