SENSE AMPLIFIER FOR MEMORY CELL

摘要

PROBLEM TO BE SOLVED: To obtain a sense circuit sensing a logical state of a memory cell in which a reading time is minimized. SOLUTION: This sense circuit has a first circuit branch corresponding to an array circuit path and a second circuit branch corresponding to a reference cell circuit path. An additional load and a current generating circuit are enabled in the first circuit path so that they are driven during a predecoding interval in operation so that voltage discriminated by a sense input of a comparator of the sense circuit is substantially equivalent to voltage of a reference signal established by the reference cell circuit path of a reference input of a comparator of the sense circuit. When an address is decoded, the additional load circuit is disabled so that a sense input of the comparator is varied to voltage indicating a logical state stored in a memory cell.