METHOD FOR MEASURING CONCENTRATION OF IMPURITY IN SILICON WAFER

摘要

PROBLEM TO BE SOLVED: To provide a silicon wafer impurity concentration measuring method which ensures a high rate of collecting boron whereby the concentration of boron contained in the surface region of a silicon wafer can be measured with high accuracy and sensitivity. SOLUTION: A solution containing hydrofluoric acid and phosphoric acid is dropped onto the silicon wafer. The solution dropped is held on the silicon wafer to decompose a silicon oxide film present in the surface region of the silicon wafer to collect boron contained in the silicon oxide film into the solution dropped. The amount of boron collected into the solution is measured. Since boron is collected in the form of phosphoric compounds because of the phosphoric acid contained in the solution dropped, the method inhibits the volatilization of the boron.