发明名称 |
Method of fabricating semiconductor device having a dual-gate |
摘要 |
The method of fabricating a semiconductor device having a dual-gate provides a semiconductor substrate with a gate insulating film formed on a first portion and a second portion thereof and a polysilicon layer formed on the gate insulating film. A first dopant of a first conductive type is implanted in the polysilicon layer covering the first portion, and a second dopant of a second conductive type is implanted in the polysilicon layer covering the second portion. Then, the polysilicon layer covering the first portion is selectively etched using a first mask to form a first gate, and a third dopant of the first conductive type is implanted to form source/drain LDD regions on both sides of the first gate. Thereafter, the polysilicon layer covering the second portion is selectively etched using a second mask to form a second gate, and a fourth dopant of the second conductive type is implanted to form source/drain LDD regions on both sides of the second gate.
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申请公布号 |
US6218229(B1) |
申请公布日期 |
2001.04.17 |
申请号 |
US19970962240 |
申请日期 |
1997.10.31 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
YOUN KANG-SIK;PARK HONG-BAE;KIM JONG-CHAE |
分类号 |
H01L27/092;H01L21/02;H01L21/8238;(IPC1-7):H01L21/823 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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