Method of making highly defined bilayer lift-off mask

摘要

A method makes a highly defined bilayer lift-off mask wherein lift-off mask material is subjected to an electron beam for decreasing the molecular weight of a bottom release layer and increasing the molecular weight of a top photoresist layer so that a weak developer can be employed for patterning the bottom release layer and ion milling, which is employed for removing layers not covered by the lift-off mask, does not alter a track width of the top photoresist layer.