| 摘要 |
A semiconductor integrated circuit device has an output circuit formed in a CMOS structure and composed of a P-channel MOS transistor that has its gate connected to an input terminal, has its source connected to a power source line, and has its drain connected to an output terminal and an N-channel MOS transistor that has its gate connected to the input terminal, has its source connected to ground, and has its drain connected to the output terminal. A first protection diode is formed in parallel with the source-drain channel of the P-channel MOS transistor. A first NPN-type transistor is so formed that its base is connected to ground and its collector-emitter path is connected in parallel with the source-drain channel of the P-channel MOS transistor. A second protection diode is formed in parallel with the source-drain channel of the N-channel MOS transistor. A thyristor circuit is provided in parallel with the source-drain channel of the N-channel MOS transistor. This thyristor circuit operates only when abnormal electrostatic charge is applied to the output terminal.
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