发明名称 METHOD OF PRODUCTION OF SEMICONDUCTOR DEVICE
摘要 A method of production of a semiconductor device having bumps on its surface and having spaces between the bumps sealed by a resin capable of cutting a wafer accurately positioned to cutting lines giving a cutting margin on the wafer in a dicing step of the semiconductor device. On a semiconductor wafer 10 in which circuit patterns of semiconductor chips are formed in a first region and cutting lines 16 between semiconductor chips are formed extending across the first region and a second region, bumps are formed so as to be connected to the circuit patterns of the semiconductor chips, a resin coating 15 is formed on a bump forming surface of the semiconductor wafer to a predetermined thickness in the first region while sealing the spaces between the bumps and to a thickness enabling confirmation of positions of parts of the cutting lines in regions 16a containing at least the parts of the cutting lines in the second region, and the semiconductor wafer is cut along the cutting lines using as reference positions the cutting lines confirmed in the regions containing at least the parts of the cutting lines in the second region.
申请公布号 SG80072(A1) 申请公布日期 2001.04.17
申请号 SG19990004819 申请日期 1999.09.23
申请人 SONY CORPORATION 发明人 SAITO TAKASHI
分类号 H01L25/00;H01L21/301;H01L21/56;H01L21/60;H01L23/31 主分类号 H01L25/00
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