| 摘要 |
PURPOSE: To obtain a method for manufacturing a semiconductor element whose stability and reproducibility are superior by a method, where the semiconductor element is conveyed under reduced pressure so as to be annealed by PH3 continuously, the capacitance of a capacitor is increased effectively and a nitrifying treatment is performed at a low temperature. CONSTITUTION: A method is given, in which a capacitor electrode whose surface is uneven and which is composed of polysilicon is formed on a semiconductor substrate. The method is composed of a process in which a spontaneous oxide film to be stuck to the surface of amorphous silicon is removed as a pretreatment. The method is composed of a process, in which the amorphous silicon, is heated up to a prescribed temperature. The method is composed of a a process, in which SiH4 at a prescribed concentration is sprayed to the amorphous silicon and in which an amorphous silicon/polysilicon mixed-phase active layer is formed on the surface, a process in which an annealing operation is performed at a prescribed temperature so as to form an HSG, in such a way that the surface of the amorphous silicon becomes uneven, a process in which the polysilicon with the formed HSG is annealed by PH3, method is composed of a process in which PH3 at a prescribed concentration is made to flow from a stage at which the amorphous silicon is heated up to the prescribed temperature, and a process, in which NH3 gas instead of PH3 is made to flow continuously and in which a nitrifying treatment is executed to the surface of the amorphous silicon at a prescribed temperature.
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