| 摘要 |
PURPOSE: A thin film resonator and a method for manufacturing the same are provided to achieve a high quality thin film resonator causing a low loss with respect to an electric signal to be impressed to the thin film resonator. CONSTITUTION: Electrodes(52,54), such as aluminum or other metal electrodes, are produced on either side of the film(46) to form a capacitor with the film(46). The electrodes(52,54) are deposited by sputtering which is typically performed using Argon gas as a sputtering gas. As would be understood by one of skill in the art, this type of sputtering involves placing an electric field and Argon between the TFR being fabricated and an aluminum(Al) target. The Argon ions are attracted to the Al target and bombard the Al target, releasing Al ions and neutral species which are deposited on the top and/or bottom as well as the substrate(40) of the film(46). Other electrode deposition techniques can be used, such as chemical vapor deposition (CVD). |
