| 摘要 |
PURPOSE: To provide a semiconductor storage device, which can be integrated in a semiconductor storage device, comprising a semiconductor memory cell to which a source is in common connected, and its manufacture. CONSTITUTION: In a semiconductor storage device, having an element isolation film formed in a silicon substrate 101 and a plurality of semiconductor memory cells formed between the element isolation films, there are provided conductive films 116a, 116b which are formed on the plane of the silicon substrate 101, and connect a source diffusion region 112 of at least two semiconductor memory cells.
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