发明名称 MAGNETRON SPUTTERING SYSTEM AND SPUTTERING METHOD
摘要 PROBLEM TO BE SOLVED: To obtain a sputtered film increased in deposition rate, excellent in uniformity of film quality, and having uniform thickness. SOLUTION: The magnetron sputtering system is constituted in such a way that a target 13 and a substrate 14 are disposed in a manner to be opposed to each other in a vacuum chamber and a magnet couple 15 for magnetron, consisting of an annular magnet 15a and a magnet 15b disposed inside its hollow part, are provided under the above target, and the target atoms sputtered from the target by means of plasma 16 actuated by the magnetic fields of the above magnet couple are deposited onto the above substrate to form a sputtered film. In this magnetron sputtering system, the substrate 14 is rotatably provided and also at least three magnet couples for magnetron are provided under the target in a manner to be movable in vertical direction and/or lateral direction to uniformize sputtering intensity over the whole surface of the substrate.
申请公布号 JP2001107233(A) 申请公布日期 2001.04.17
申请号 JP19990291097 申请日期 1999.10.13
申请人 SHIN ETSU CHEM CO LTD 发明人 MARUYAMA TAMOTSU;KANEKO HIDEO;INAZUKI SADAOMI;OKAZAKI SATOSHI
分类号 H01L21/31;C23C14/35;H01L21/203;H01L21/285;(IPC1-7):C23C14/35 主分类号 H01L21/31
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