METHOD FOR MEASURING INNER CURRENT OF SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To measure time variation of gate current and anode current quantitatively. SOLUTION: Quantity of photons generated at the time of recombination of carriers under steady ON state of a measuring element 1 is measured for both gate current and anode current. Correlations between the gate current and gate photons and between the anode current and anode photons are determined based on the quantity of photons. Time variation is then measured for gate photons and total photons at the time of switching operation of the element under operating conditions thereof. Subsequently, time variation of anode photons is determined based on the time variation of gate photons and total photons, time variation of gate current is measured quantitatively based on the correlation betweens the gate current and gate photons and the time variation of gate photons and then time variation of anode current is measured based on the correlation between the anode current and anode photons and the time variation of anode photons.