| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a compound semiconductor epitaxial wafer for obtaining a field effect transistor, in which leak currents between source/drain electrodes can be reduced. SOLUTION: In this method for manufacturing a compound semiconductor epitaxial wafer, arsine and organic arsenic materials are introduced simultaneously, and the surface of a semi-insulating GaAs substrate is cleaned before epitaxial layers 2-4 for an electric field transistor constituted of III-V group compound semiconductors are grown on the substrate by using an MOVPE method. Thus, a conductive layer can be prevented from being generated on a boundary face between the semi-insulating substrate and the epitaxial layer.
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