发明名称 INTEGRATED CIRCUIT CHIP STRUCTURE AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a structure and a process for incorporating air or another gas in a multi-layer chip as a permanent dielectric medium by supplying a CVD diamond as dielectrics in semi-sacrificial layer and in-layer dielectrics. SOLUTION: A CVD diamond is supplied as dielectrics in semi-sacrificial layer and in-layer dielectrics, and then a semi-sacrificial dielectrics is at least partially removed by isotropic oxygen etching. A disclosed one deformed example presents a eventual permanent CVD diamond sealing material for a gas dielectric medium to be confined in a chip.
申请公布号 JP2001102453(A) 申请公布日期 2001.04.13
申请号 JP20000245862 申请日期 2000.08.14
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 CLEVENGER LAWRENCE A;LOUIS L SHU
分类号 H01L23/522;H01L21/314;H01L21/764;H01L21/768;H01L23/482;H01L23/532;(IPC1-7):H01L21/768 主分类号 H01L23/522
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