发明名称 |
INTEGRATED CIRCUIT CHIP STRUCTURE AND MANUFACTURING METHOD THEREOF |
摘要 |
PROBLEM TO BE SOLVED: To provide a structure and a process for incorporating air or another gas in a multi-layer chip as a permanent dielectric medium by supplying a CVD diamond as dielectrics in semi-sacrificial layer and in-layer dielectrics. SOLUTION: A CVD diamond is supplied as dielectrics in semi-sacrificial layer and in-layer dielectrics, and then a semi-sacrificial dielectrics is at least partially removed by isotropic oxygen etching. A disclosed one deformed example presents a eventual permanent CVD diamond sealing material for a gas dielectric medium to be confined in a chip.
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申请公布号 |
JP2001102453(A) |
申请公布日期 |
2001.04.13 |
申请号 |
JP20000245862 |
申请日期 |
2000.08.14 |
申请人 |
INTERNATL BUSINESS MACH CORP <IBM> |
发明人 |
CLEVENGER LAWRENCE A;LOUIS L SHU |
分类号 |
H01L23/522;H01L21/314;H01L21/764;H01L21/768;H01L23/482;H01L23/532;(IPC1-7):H01L21/768 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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