Process for the large surface direct bonding of wafers e.g. gallium arsenide wafers comprises carrying out final cleaning of wafers using molecular or atomic hydrogen and bringing cleaned surfaces of wafers in contact with each other

摘要

Process for the large surface direct bonding of a first wafer to a second wafer comprises: carrying out the final cleaning of the wafers using molecular or atomic hydrogen; and bringing the cleaned surfaces of the wafers in contact with each other Process for the large surface direct bonding of a first wafer to a second wafer comprises: carrying out the final cleaning of the surfaces of the wafers to be bonded either at a high temperature through the action of molecular hydrogen or at a low temperature either through the action of atomic hydrogen or molecular hydrogen with the simultaneous irradiation of ultraviolet light; and bringing the cleaned surfaces of the wafers in contact with each other.