发明名称 Chemical-mechanical polishing slurry
摘要 One embodiment of the present invention includes a chemical-mechanical polishing (CMP) slurry. The slurry is comprised of one or more ferrocenium salts that is or are reduced, during use, to ferrocene. The slurry also includes an abrasive and a concentration of hydronium ions effective to impart a pH of less than 7.
申请公布号 US6214098(B1) 申请公布日期 2001.04.10
申请号 US20000504191 申请日期 2000.02.15
申请人 INTEL CORPORATION 发明人 LEE KEVIN J.
分类号 H01L21/321;(IPC1-7):H01L21/461 主分类号 H01L21/321
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