| 摘要 |
PROBLEM TO BE SOLVED: To provide a composition for forming an antireflection film having a higher dry etching rate than a photoresist. SOLUTION: The composition contains (A) at least one compound selected from a compound of the formula Si(OR1)a(OR2)b(RO3)c(OR4)d (where R1-R4 are each a 1-4C alkyl or phenyl), a compound of the formula R5Si(OR6)e(OR7)f(OR8)g (where R5 is H, a 1-4C alkyl or phenyl and R6-R8 are each a 1-3C alkyl or phenyl) and a compound of the formula R9R10Si(OR11)h(OR12)i (where R9 and R10 are each H, a 1-4C alkyl or phenyl and R11 and R12 are each a 1-3C alkyl or phenyl), and (B) at least one highly light absorbing material having a substituent capable of condensing with the component A in its structure. |
