| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-mobility, low-cost polycrystalline silicon film and a method of manufacturing the film. SOLUTION: A silicon nitride film 11 and a silicon oxide film 12 are deposited on an insulating substrate 51, using a PECVD method. An amorphous silicon film 52 is deposited on the film 12, and the film 52 is then polycrystallized by melting recrystallization method to form a polycrystalline silicon film 53, which is thereafter patterned. A silicon oxide film 13 and a silicon nitride film 14 are deposited on the film 53 using the PECVD method. Furthermore, the films 11 to 14 are heated by a heat treatment, whereby hydrogen contained in the films 11 to 14 is liberated, and the liberated hydrogen is liberated into the film 53 to inactivate grain boundaries and crystal defects and hence improve the mobility of the film 53. Such heat treatment methods includes laser annealing method, electron beam annealing method, and RTA methods.
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