| 摘要 |
PROBLEM TO BE SOLVED: To accurately measure the thickness of an insulation film and facilitate the control, evaluation, etc., of the insulation film. SOLUTION: After forming a gate oxide film 8 on a Si substrate 1, the time for it to be left standing from forming of the gate oxide film 8 to the film thickness measurement is controlled to measure the thickness of the gate oxide film 8, based on the left time. Specifically, the time left standing from forming of the gate oxide film 8 is controlled to measure the thickness of the oxide film. Thus the thickness of the oxide film can be made accurately.
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