发明名称 |
METHOD FOR MANUFACTURING OF SEMICONDUCTOR |
摘要 |
PROBLEM TO BE SOLVED: To reduce defects in an epitaxial silicon film formed at a low depositional temperature. SOLUTION: This method comprises a process for epitaxially growing a silicon film on one main face of a single-crystal silicon substrate and a process for carrying out heat treatment in an oxidizing atmosphere.
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申请公布号 |
JP2001093900(A) |
申请公布日期 |
2001.04.06 |
申请号 |
JP19990272325 |
申请日期 |
1999.09.27 |
申请人 |
TOSHIBA CORP |
发明人 |
MIZUSHIMA ICHIRO;KANBAYASHI SHIGERU |
分类号 |
H01L21/205;H01L21/316;(IPC1-7):H01L21/316 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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