发明名称 |
Twin current bipolar device with hi-lo base profile |
摘要 |
A bipolar transistor is described whose I-V curve is such that it operates in two regions, one having low gain and low power consumption and another having higher gain and better current driving ability. Said transistor has a base region made up of two sub regions, the region closest to the emitter having a resistivity about an order a magnitude lower than the second region (which interfaces with the collector). A key feature of the invention is that the region closest to the collector is very uniformly doped, i.e. there is no gradient or built-in field present. In order to produce such a region, epitaxial growth along with boron doping is used rather than more conventional techniques such as ion implantation and/or diffusion.
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申请公布号 |
US6211028(B1) |
申请公布日期 |
2001.04.03 |
申请号 |
US19990245560 |
申请日期 |
1999.02.05 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
TSAI JUN-LIN;LIU RUEY-HSING;PENG CHIOU-SHIAN;LIU KUO-CHIO |
分类号 |
H01L21/331;H01L29/10;H01L29/732;(IPC1-7):H01L21/331 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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