| 摘要 |
PROBLEM TO BE SOLVED: To provide an additive and a film deposition method in which copper plating is preferentially progressed in grooves with the width of <=1μm or holes with the diameter of <=1μm to prevent the generation of voids, in a copper plating process in a semiconductor. SOLUTION: In a stage in which a film is deposited on a substrate having grooves each with a height (h) and a width (w) or holes each with a radius (w), an additive, in which, in the case the ratio of the diffusion coefficient D [m2/s] of the material (additive) checking the film deposition by being added to the adsorption or consumption reaction rateκ[m/s] in the surface is defined as D/κ, the following two inequalities are simultaneously satisfied, and a film deposition process are used: where 0.005×h2/w<D/κ<0.5×h2/w and 0.01<θ<=0,7, whereθdenotes (the film deposition rate in the case the additive is present)/(the film deposition rate in the case the additive is absent). |
