发明名称 CMP POLISHING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To selectively polish a surface to be polished at a stable polishing speed without generation of flaw in a highly flat condition. SOLUTION: This method performs polishing on a surface to be polished by using a mixed liquid of 0.5-10 wt.% of a liquid A containing cerium oxide particles, 0.003-0.3 wt.% of surface active agent and water and a liquid B containing 1-50 wt.% of surface active agent and water.</p>
申请公布号 JP2001088015(A) 申请公布日期 2001.04.03
申请号 JP19990263858 申请日期 1999.09.17
申请人 HITACHI CHEM CO LTD 发明人 HIRAI KEIZO;SAKURADA TAKASHI;HAGA KOJI
分类号 B24B37/00;C09K3/14;C09K13/00;H01L21/304;H01L21/306;(IPC1-7):B24B37/00 主分类号 B24B37/00
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