METHOD FOR FORMING STORAGE ELECTRODE OF INNER CAPACITOR

摘要

PURPOSE: A storage electrode formation method of an inner capacitor is provided to prevent a fail and to improve a structural stability by decreasing the height of the storage electrode. CONSTITUTION: A bit line(33) is formed on a silicon substrate(30) having a contact plug via a first interlayer dielectric. A second interlayer dielectric(36) and an etch stop layer(37) are sequentially formed on the resultant structure. A contact hole is formed to expose the contact plug by selectively etching the etch stop layer and the second interlayer dielectric. The size of the contact hole is increased by isotropic etching of the second interlayer dielectric. A sacrificial layer(38) is deposited on the resultant structure. At this time, voids are simultaneously formed in the contact hole. The sacrificial layer and the etch stop layer are selectively etched. A conductive layer(39) for forming a storage electrode is then formed on the resultant structure.