发明名称 |
Method to produce dual polysilicon resistance in an integrated circuit |
摘要 |
A new method of forming polysilicon resistors having differing resistances using a dual polysilicon process is described. A first polysilicon layer is deposited over a dielectric layer on a semiconductor substrate. The first polysilicon layer is etched away where it is not covered by a mask. Thereafter, a second polysilicon layer is deposited overlying the first polysilicon layer and the dielectric layer. The first and second polysilicon layers are patterned to form a first polysilicon structure comprising the first and second polysilicon layers over the dielectric layer and a second polysilicon structure comprising the second polysilicon layer overlying the dielectric layer. The first and second polysilicon structures are doped to form the first polysilicon structure having a first resistance and the second polysilicon structure having a second resistance wherein the first resistance is lower than the second resistance.
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申请公布号 |
US6211031(B1) |
申请公布日期 |
2001.04.03 |
申请号 |
US19980165000 |
申请日期 |
1998.10.01 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
LIN DAH-CHIH;SHEN CHIN-HENG;CHEN SEN-FU |
分类号 |
H01L21/02;H01L27/08;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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