| 摘要 |
PROBLEM TO BE SOLVED: To prevent a water content from dispersing into an SiO2 insulating film of low permittivity by allowing an SiO2 insulating film comprising a large amount of fluorine to be coated with, or laminated with, an SiO2 insulating film whose hydrogen concentration is at a specified value or less. SOLUTION: An insulating oxide film 38 is formed over a semiconductor substrate 35, and over the insulating oxide film 38, a plurality of element wirings 36a of titanium, aluminum, and titanium nitride, etc., which transmits/receives a signal are provided. The element wiring 36a is covered with a low permittivity insulating film 37a, such as SiO2 of 700 nm which comprises fluorine 7 at.%. The insulating film 37a is covered with a moisture-resistant insulating film 37b, such as SiO2 of 300 nm, 0 at.%-1.25 at.%, to form a semiconductor device 50 with moisture-resistance. Thus, water content is prevented from dispersing into the insulating film 37 of SiO2 of low permittivity.
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