| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for plasma etching of a mechanically ground silicon substrate which can ensure uniform etching quality with no variations. SOLUTION: A method for plasma etching of a silicon substrate for plasma- etching a silicon substrate 7 after grinding. After a first plasma processing, where with oxygen gas being supplied to a processing chamber 5, plasma discharging is executed to clean the silicon substrate 7, the surface of the silicon substrate 7 is removed by a second plasma processing, where with a mixed gas of oxygen gas and fluorine gas supplied to the processing chamber, plasma discharging is executed. Thereby, variation in etching quality caused by an organic contaminant can be eliminated and uniform plasma etching is executed. |
