发明名称 METHOD OF IMPROVED ESTIMATION OF CRITICAL DIMENSIONS IN MICROELECTRONIC FABRICATION
摘要 <p>A method is provided for manufacturing, the method including processing a workpiece (100) in a processing step (105), measuring (110) a critical dimension of features (205) formed on the workpiece using a test structure (200) formed on the workpiece (100), the test structure (200) including a plurality of the features (205), and forming an output signal (125) corresponding to the critical dimension measurements (120). The method also includes feeding back a control signal (135, 155) based on the output signal (125) to adjust the processing performed in the processing step (105) if the output signal (125) corresponding to the critical dimension measurements (120) indicates a predetermined tolerance value has been exceeded (130, 150).</p>
申请公布号 WO0122183(A1) 申请公布日期 2001.03.29
申请号 WO2000US12279 申请日期 2000.05.05
申请人 ADVANCED MICRO DEVICES, INC. 发明人 TOPRAC, ANTHONY, J.
分类号 G03F7/20;G05B19/418;H01L21/66;(IPC1-7):G05B19/418 主分类号 G03F7/20
代理机构 代理人
主权项
地址