| 摘要 |
<p>A method of efficiently manufacturing a semiconductor wafer having high planarity from a wafer which has passed a surface-grinding process. Low planarity at the center, its vicinity, and the outer periphery of a surface-ground wafer is suppressed to the utmost and the low planarity can easily be corrected in a planarizing or polishing process to improve the planarity. In surface-grinding a semiconductor wafer fastened on a chuck table using a cup-shaped grindstone, the grindstone starts to grind from the outer periphery of the semiconductor wafer and leaves from the semiconductor wafer at its central part so as to grind the semiconductor wafer toward its center. The ground semiconductor wafer is planarized by a PACE method.</p> |
