| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an electronic device in which it is prevented that electrons are injected or withdrawn excessively in/from a floating gate of a memory cell, while a rewriting time of data of a flash ROM can be shortened when data of a mounted flash ROM is rewritten, in an electronic device provided with a flash ROM. SOLUTION: A flash ROM 24 mounted in an electronic device can be rewritten in a state that a memory rewriting device 4 is connected to the electronic device. At this time, when a rewriting request signal transmitted from the memory rewriting device 4 is received, the electronic device estimates device temperature of the flash memory 24, when the device temperature is in the prescribed range, rewriting processing is performed. On the other hand, when the device temperature is the out of the prescribed range, rewriting processing is not performed, it is informed to the memory rewriting device 4 that the device is in a rewriting prohibition state.</p> |
