| 摘要 |
PROBLEM TO BE SOLVED: To enhance a photoelectronic integrated circuit device by a method, where a plurality of selective growth regions are formed on the surface on one side of the surfaces of a substrate and a semiconductor layer is grown from those selective growth regions. SOLUTION: A plurality of a selective growth regions are formed on a semi- insulating GaAs substrate 1 of the plane orientation (001) and a striped pattern 1a having a rectangular section is formed on the surface of each of those selective growth regions. In this case, the extension directions of the patterns 1a are set, so as to turn to the direction positioned off by a small angleθfrom the orientation <110> to the side of the orientation <010>. A GaAs layer is epitaxially grown on the substrate 1 by a nonequilibrium crystal growth method, and the GaAs layer 2 which is a trianglar prismatic semiconductor layer is formed on the patterns 1a.
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