| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing capacitor of semiconductor device by which leakage currents can be reduced and the electric characteristics of a capacitor can be improved. SOLUTION: A method for manufacturing capacitor of semiconductor device includes a step of forming a lower electrode on a semiconductor substrate 11 on which a prescribed bottom structure is formed, a step of performing plasma treatment on a tantalum oxide film 15 after the film 15 is formed on the lower electrode, and a step of successively forming a secondary tantalum oxide film 16 and a tantalum, oxinitride film 17 on the primary tantalum oxide film 15. The method also includes a step of forming an upper electrode on the tantalum oxinitride film 17. |
