SEMICONDUCTOR STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To assure defect analysis and to shorten defect analyzing time by generating surely auto-power-down control signal in a short time by electrical control from the outside of a semiconductor memory, and suppressing forcedly an auto-power-down function. SOLUTION: This device is provided with an auto-power-down control signal generating circuit 10 generating an auto-power-down control signal APDC which has a 'L' level directly after applying power source and has a 'H' level by control from a control terminal at a point of desired time, and a word line selection signal generating circuit 20 which performs ANDing of an auto-power- down signal APD generated based on an address transition detecting signal and the auto-power-down control signal to prescribed a drive period of a word line selecting a memory cell of a memory cell array, performs ANDing of this OR output and an address decoding signal, and selects and controls a word line by this AND output.