发明名称 Method for controlling stress in thin film layers deposited over a high density interconnect common circuit base
摘要 A method for forming a high density interconnect printed wiring board substrate that has a first patterned conductive layer formed over an upper surface of the substrate that includes multiple conductive lines having edges that define the boundaries of the conductive lines and a dielectric layer formed over the patterned conductive layer and between the edges of the conductive lines. The method includes forming a thin film conductive layer over the dielectric layer, and patterning the thin film conductive layer such that, after the patterning step, the thin film conductive layer overlies each of the edges of the conductive lines. In a preferred embodiment, the thin film conductive layer is patterned such that, after the patterning step, the layer overlies the edges of the conductive lines by at least 10 microns. In another aspect of the invention, a method for strengthening thin film build-up layers deposited over a high density interconnect common circuit base is taught. According to this aspect, a photo-definable thin film dielectric layer having a coefficient of expansion of less than about 10% is formed over a patterned conductive layer, and a thin film conductive layer is formed over the photo-definable thin film dielectric layer. The thin film conductive layer is then patterned to include a plurality of signal lines and a plurality of thieving lines with the thieving lines being placed between nonuniformly spaced signal lines to provide a substantially uniform combined pattern of signal lines and thieving lines.
申请公布号 US6203967(B1) 申请公布日期 2001.03.20
申请号 US19980127579 申请日期 1998.07.31
申请人 KULICKE & SOFFA HOLDINGS, INC. 发明人 WESTBROOK SCOTT M.;STRANDBERG JAN I.
分类号 H01L23/12;H01L21/48;H01L23/538;H05K1/02;H05K3/00;H05K3/46;(IPC1-7):G03C5/00 主分类号 H01L23/12
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