发明名称
摘要 PROBLEM TO BE SOLVED: To form a thin (Ba, Sr)TiO3 dielectric film having a high dielectric constant and high insulating property and useful as a capacitor material for various uses in an electronic device. SOLUTION: This compsn. contains a principal compsn. in which the molar ratio of Ba:Sr:Ti is (1-x):x:y (0<=x<=1.0 and 0.9<=y<=1.1) and 0.5-10mol% (expressed in terms of Si) Si component based on the amt. of the principal compsn. A substrate is coated with this compsn. by a spin coating method and drying and firing at 450-800 deg.C are carried out. Compsn. control is easily attained and the objective thin (Ba, Sr)TiO3 dielectric film having a high dielectric constant and high insulating property is formed by a low-cost sol-gel method.
申请公布号 JP3146961(B2) 申请公布日期 2001.03.19
申请号 JP19950314100 申请日期 1995.12.01
申请人 发明人
分类号 C04B35/46;C01G23/00;H01B3/12;H01G4/12;H01G4/33 主分类号 C04B35/46
代理机构 代理人
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