| 摘要 |
PROBLEM TO BE SOLVED: To relax a field concentration by a depletion layer in a drain offset region and to contrive an increase in the breakdown voltage of an insulated-gate field-effect transistor, by a method wherein a high-concentration drain region is formed in such a way that the drain region is encircled by a low-concentration offset region. SOLUTION: A gate insulating film 3 and a gate electrode 4 are extended from a drain offset region 6 to the upper surface of one part of a drain region 7 to correspond to the microscopic formation and the speedup of an element due to an extreme reduction in the width of a gate. The part, which is provided on the side of a channel region 10, of the high-concentration drain region 7 is formed in succession to the region 6, but the region 6 is extended to the part of the outside of the region 7 positioned in the direction intersecting orthogonally the direction of the region 10, and the region 7 is not formed at the part of the outside. Accordingly, the edge of the region 7 positioned on the side of the gate, does never come into contact with the film 3 and a field insulating film, a field concentration in the edge is relaxed and an increase in the breakdown voltage of an insulated-gate field-effect transistor can be realized.
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