| 摘要 |
<p>PROBLEM TO BE SOLVED: To suppress dishing by allowing a metal polishing liquid to contain a metal oxidant, organic acid, protective film forming agent for a metal surface, halogen ion in a specified concentration range, and water, for keeping a polishing speed with high CMP while an etching speed I sufficiently lowered. SOLUTION: A metal film containing copper alloy is formed and packed on a substrate comprising a recessed part on its surface. When the substrate is CMP-processed with a polishing liquid, a metal film at the protruding part of the substrate is selectively CMP-processed, leaving a metal film in the recessed part to provide a desired conductor pattern. A metal polishing liquid requires a metal oxidant, organic acid, protective film forming agent for a metal surface, halogen ion in concentration of 0.0001-0.02 mol/Kg, and water, and a water-soluble polymer and/or solid abrasive grain is added as required, with pH adjusted to 2-5. As an oxidant for metal, hydrogen peroxide, nitric acid, potassium periodate, hypochlorous acid, and ozone water, etc., are listed, with hydrogen peroxide especially prefered.</p> |
