| 摘要 |
PURPOSE: A semiconductor wafer and a fabrication method thereof are provided to suppress a latch-up phenomenon caused by wells of different conductive types. CONSTITUTION: A metal(2) is deposited on the first silicon wafer where different wells(5,6) are to be formed, and then patterned. The first silicon wafer is a blank wafer cut from a silicon ingot. Thereafter, an insulating layer(3) is deposited on the entire surface of the first silicon wafer(1) to prevent degradation of semiconductor devices and then planarized by a chemical mechanical polishing. Next, the second silicon wafer(4) is joined to the planarized insulating layer(3) to improve mechanical stiffness of the resultant wafer. The first silicon wafer is then back-ground to have a reduced thickness. Thereafter, an n-well(5) and a p-well(6) are formed in the first silicon wafer. The metal pattern(2) formed under the wells(5,6) reduces the resistance of the wells(5,6) and thereby prevents an undesirable latch-up phenomenon.
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