GATE CONDUCTOR FOR CONTROLLING LENGTH OF POLY WITHIN HIGH DENSITY DRAM

摘要

PURPOSE: A gate conductor for controlling a length of poly within a high density DRAM is provided to control a length of a polysilicon by improving a gate conductor process. CONSTITUTION: A semiconductor substrate(10) with a gate dielectric is provided. A gate stack including an oxide layer(12), a polysilicon layer(16), a gate conductor material layer(18), and a nitride layer(20) is formed on the gate dielectric. A gate conductor(22) with a sidewall is formed by etching the nitride layer(20) to the gate conductor material layer(18). A dielectric spacer(30) having the same level as a polysilicon layer sidewall(34) is formed at a gate conductor sidewall.