SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a method for manufacturing thereof are provided to prevent a degradation of properties of capacitors by using a capacitor insulating film composed of an insulating metal oxide film. CONSTITUTION: A protective insulating film(106) is deposited over first and second field oxide transistors formed on a semiconductor substrate(100). A capacitor composed of a capacitor lower electrode(109), a capacitor insulating film(110A) composed of an insulating metal oxide film, and a capacitor upper electrode(111) is formed on the protective insulating film(106). A first contact plug(107) formed in the protective insulating film provides a direct connection between the capacitor lower electrode and an impurity diffusion layer(105) of the first field effect transistor. A second contact plug(108) formed in the protective insulating film provides a direct connection between the capacitor upper electrode and the impurity diffusion layer(105) of the second field effect transistor.