Vertical impact ionization metal oxide semiconductor transistor for use as e.g. N-channel MOS transistor, has stack with semiconductor portions to form vertical PIN type diode, and gate, placed against stack, with thickness less than stack

摘要

The transistor has a stack comprising a lower semiconductor portion (135) doped with N-type doping component, an intrinsic semiconductor portion (136) and an upper semiconductor portion (130) doped with P-type doping component so as to form a vertical PIN type diode. A conductive gate (181) is placed against the stack with interposition of an insulating layer (150) and has thickness less than the stack, where conductive spacers of the gate are connected to a gate terminal, and the lower and upper semiconductor portions are connected to source and drain terminals. An independent claim is also included for a method of formation of a vertical impact ionization metal oxide semiconductor transistor (IMOS) transistor.