发明名称 |
Electronic memory with disturb prevention function |
摘要 |
A ferroelectric destructive read-out memory system includes a power source, a memory array including a memory cell, and a logic circuit for applying a signal to the memory array. Whenever a low power condition is detected in said power source, a disturb prevent circuit prevents unintended voltages due to the low power condition from disturbing the memory cell. The disturb prevent circuit also stops the operation of the logic circuit for a time sufficient to permit a rewrite cycle to be completed, thereby preventing loss of the data being rewritten.
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申请公布号 |
US6201731(B1) |
申请公布日期 |
2001.03.13 |
申请号 |
US19990322490 |
申请日期 |
1999.05.28 |
申请人 |
CELIS SEMICONDUCTOR CORPORATION |
发明人 |
KAMP DAVID A.;DERBENWICK GARY F.;COOMBE GEORGE B.;MEESTER TROY A. |
分类号 |
G11C11/22;(IPC1-7):C11C16/04 |
主分类号 |
G11C11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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