发明名称 |
Fabricating process for polysilicon gate |
摘要 |
A fabrication process for a polysilicon gate is described in which a silicon dioxide layer of various thicknesses is formed on the substrate and on the polysilicon gate with an overlying anti-reflection layer. The silicon dioxide layer is removed with enough silicon dioxide layer remaining to cover the sidewalls of the polysilicon gate and the silicon substrate before the removal of the anti-reflection layer. The sidewalls of the polysilicon gate and the silicon substrate are thus simultaneously protected during the removal of the anti-reflection layer.
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申请公布号 |
US6200886(B1) |
申请公布日期 |
2001.03.13 |
申请号 |
US19990428353 |
申请日期 |
1999.10.28 |
申请人 |
UNITED SILICON INCORPORATED;UNITED MICROELECTRONICS CORP. |
发明人 |
YU HONG-CHEN;HSIAO HSI-MAO;LIN HSI-CHIN;CHEN CHUN-LUNG |
分类号 |
H01L21/28;H01L21/336;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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