发明名称 Radical-assisted sequential CVD
摘要 A new method for CVD deposition on a substrate is taught wherein radical species are used in alternate steps to depositions from a molecular precursor to treat the material deposited from the molecular precursor and to prepare the substrate surface with a reactive chemical in preparation for the next molecular precursor step. By repetitive cycles a composite integrated film is produced. In a preferred embodiment the depositions from the molecular precursor are metals, and the radicals in the alternate steps are used to remove ligands left from the metal precursor reactions, and to oxidize or nitridize the metal surface in subsequent layers. A variety of alternative chemistries are taught for different films, and hardware combinations to practice the invention are taught as well.
申请公布号 US6200893(B1) 申请公布日期 2001.03.13
申请号 US19990267953 申请日期 1999.03.11
申请人 发明人
分类号 C23C16/44;C23C16/452;C23C16/455;H01L21/285;H01L21/314;H01L21/316;(IPC1-7):H01L21/44 主分类号 C23C16/44
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